MIL-STD-750D
NOTICE 3
29 February 2000
DEPARTMENT OF DEFENSE
TEST METHOD STANDARD FOR SEMICONDUCTOR DEVICES
TO ALL HOLDERS OF MIL-STD-750D:
1. THE FOLLOWING PAGES OF MIL-STD-750D HAVE BEEN REVISED AND SUPERSEDE THE PAGES
LISTED:
METHOD NEW PAGE DATE SUPERSEDED PAGE DATE
--- 5 28 February 2000 5 Reprinted Without Change
--- 6 29 February 2000 6 28 February 1995
--- 15 29 February 2000 15 23 February 1996
--- 16 29 February 2000 16 23 February 1996
--- 17 29 February 2000 17 Reprinted Without Change
--- 18 29 February 2000 18 23 February 1996
--- 19/20 29 February 2000 19/20 23 February 1996
2. THE FOLLOWING TEST METHODS OF MIL-STD-750D HAVE BEEN REVISED AND SUPERSEDE THE TEST
METHOD LISTED:
METHOD DATE SUPERSEDED METHOD DATE
2037.1 29 February 2000 2037 28 February 1995
2052.3 29 February 2000 2052.2 28 February 1995
2070.2 29 February 2000 2070.1 28 February 1995
2075. 1 29 February 2000 2075 28 February 1995
3101.3 29 February 2000 3101.2 28 February 1995
4016.4 29 February 2000 4016.3 28 February 1995
5001.2 29 February 2000 5001.1 28 February 1995
3. THE FOLLOWING NEW METHODS HAVE BEEN ADDED:
METHOD TITLE DATE
1080 Single Event Gate Rupture and Drain Burnout Test 29 February 2000
2102 DPA for Wire Bonded Devices 29 February 2000
4. RETAIN THIS NOTICE AND INSERT BEFORE TABLE OF CONTENTS.
AMSC N/A 1 of 2 FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process conversion measures
necessary to comply with this Notice shall be
completed by 29 August 2000.
NOTICE OF
CHANGE
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