MIL-STD-883J
METHOD 5010.4
18 June 2004
1
METHOD 5010.4
TEST PROCEDURES FOR COMPLEX MONOLITHIC MICROCIRCUITS
1. PURPOSE. This method establishes screening, qualification, and quality conformance requirements for the testing of
complex monolithic microcircuits to assist in achieving the following levels of quality (class level B and S) and reliability
commensurate with the intended application. Complex monolithic microcircuits are defined as monolithic devices that
contain a minimum of 4,500 transistors. It shall be used in conjunction with other documentation such as appendix A of
MIL-PRF-38535 and an applicable device specification or drawing to establish the design, material, performance, control,
and documentation requirements which are needed to achieve prescribed levels of device quality and reliability.
2. APPARATUS. Suitable measurement equipments necessary to determine compliance with applicable acquisition
documents and other apparatus as required in the referenced test methods.
3. PROCEDURE. The procedures defined herein, including appendix I and II, outline the requirements and testing
necessary to certify and qualify a complex microcircuit design, fabrication, assembly and testing facility. It illustrates the
concept of generic qualification through the use of standard evaluation circuits and process monitors.
3.1 Test procedures for complex monolithic microcircuits. Complex monolithic microcircuits shall be tested as described
herein, and in the device specification or drawing.
3.1.1 Precedence. Unless otherwise specified in the device specification or drawing, the test requirements and
conditions shall be given herein.
3.1.2 Electrostatic discharge sensitivity. Electrostatic discharge sensitivity testing, marking, and handling shall be in
accordance with appendix A of MIL-PRF-38535.
3.1.3 Failure analysis. When required by the applicable device specification failure analysis of devices rejected during
any test in the screening sequence shall be accomplished in accordance with method 5003, test condition A.
3.1.4 Failure analysis class level S. Class level S devices shall be analyzed in accordance with method 5003, test
condition B to identify the cause for failed lots and burn-in failures in accordance with appendix A of MIL-PRF-38535,
A.4.3.3.1, and A.4.6.1.2.1. The documented results shall only be reported to the qualifying or acquiring activity when
specifically requested.
3.1.5 Class requirements. Within tables having a class column, only those test and inspections or subgroups identified
with "B" are applicable to class level B. All apply to class level S.
3.1.6 Radiation. When required by the applicable device specification or drawing, qualification, and quality conformance
inspection requirements for radiation hardness assured devices are in addition to the normal class level S and B
requirements. These requirements for each specified radiation levels (M, D, P, L, R, F, G and H) are detailed in table VIII
herein.
3.2 Element evaluation.
3.2.1 General.
3.2.1.1 Element. Herein "element" refers to materials for device assembly. Before device assembly, element
characteristics shall be evaluated and verified to assure their compatibility with element specifications, device requirements,
and manufacturing procedures (see table I). Also, characteristics which cannot be verified after manufacturing but could
cause function failure shall be evaluated and verified before assembly.
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